Aluminum Nitride (AlN) wafer substrates are ideal for semiconductor applications requiring superior thermal management, thanks to their thermal expansion coefficient closely matching silicon. Available in diameters from 2″ to 8″ (6″ and 8″ most popular), INNOVA SUPPLIES provides high-quality AlN substrates for advanced chip manufacturing.
Product Properties
Downloads & Resources
| Resource Type | Link |
|---|---|
| Safety Data Sheet (SDS) | MSDS-AlＮ |
| Catalogue | Aluminum_Nitride_Wafer |
Product Details
Aluminum Nitride Wafer Substrates play an essential role in the semiconductor industry. One of the key reasons for their popularity is their thermal profile, which closely matches that of silicon. This similarity makes AIN substrates an excellent choice for semiconductor applications where thermal management is critical. INNOVASUPPLIES, a leading provider of these substrates,offers Aluminum Nitride Wafer Substrates in various diameters, ranging from 2 inches to 8 inches, with the 6-inch and 8-inch sizes being the most commonly used.
Aluminum Nitride Features Include:
>High Thermal Conductivity
>High Electrical Insulation
>Low Dielectric Constant
>Mechanical Strength and Stability
>Corrosion Resistance
Chemical and Thermal Stability
>High Thermal Conductivity
>High Electrical Insulation
>Low Dielectric Constant
>Mechanical Strength and Stability
>Corrosion Resistance
Chemical and Thermal Stability
The unique properties of Aluminum Nitride Wafer Substrates make them highly sought after in various semiconductor applications.
The substrates are particularly valued in:
>Power Electronics
>RF and Microwave Devices
>LED Manufacturing
>Wafer Bonding Technology
Frequently Asked Questions
Aluminum nitride (chemical formula: AlN) is an inorganic compound composed of aluminum and nitrogen. It is a stable ceramic phase formed when aluminum reacts with nitrogen gas under high-temperature conditions. It is an important high-performance ceramic material, electronic packaging material, and heat dissipation material in modern industry. Pure aluminum nitride does extremely difficult to naturally exist in nature and usually needs to be synthesized artificially (such as the direct nitridation method, carbon thermal reduction method, or chemical vapor deposition method) to produce high-purity powder, which is then sintered and formed into functional components.
1. High thermal conductivity: The thermal conductivity is 8-10 times that of aluminum oxide, suitable for efficient heat dissipation scenarios (such as power modules, LED substrates, etc.)
2. Excellent electrical insulation: Resistivity > 10¹⁴ Ω·cm, resistant to high voltage (breakdown field strength > 15 kV/mm), can be used for electronic packaging and insulating components
3. Chemical stability: Resistant to molten aluminum and copper corrosion, resistant to radiation, without toxic by-products, the product lifespan is three times that of aluminum oxide in metal melting crucibles and high-purity material evaporation vessels
4. Low thermal expansion coefficient (4.5×10⁻⁶/℃): Close to silicon (Si), reduces thermal stress, avoids semiconductor packaging thermal stress cracking, and reliability far exceeds that of aluminum oxide
5. Functional scalability: Through doping (such as yttrium stabilization), the crystal form can be regulated to achieve specific properties (such as enhancing mechanical strength or thermal shock resistance)
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