4.5 Inch Aluminum Nitride Ceramic Substrate 114.3 × 114.3 × 0.33 mm
| Formula | AlN | |
|---|---|---|
| Forms | ||
| Materials | ||
| CAS Number | 24304-00-5 | |
| Commodity | Ceramic Substrate | |
Product Properties
Downloads & Resources
| Resource Type | Link |
|---|---|
| Safety Data Sheet (SDS) | MSDS-AlN |
| Technical Data Sheet (TDS) | Aluminum Nitride Material Properties – SU0435 |
| Catalogue | Ceramic Substrates |
Product Details
The Aluminum Nitride (AlN) ceramic substrate is manufactured from high-purity AlN ceramic and is designed for high-power electronic packaging and thermal management applications. With a standard size of 114.3 × 114.3 × 0.33 mm, it is available in 200, 220, and 230 W/m·K thermal conductivity grades to meet different heat dissipation requirements.
Compared with conventional alumina substrates, AlN ceramic offers significantly higher thermal conductivity while maintaining excellent electrical insulation and a thermal expansion coefficient close to silicon. These properties help improve heat transfer efficiency and long-term reliability in electronic assemblies.
The precision-ground surface is suitable for subsequent metallization processes such as DPC, AMB, and DBC, making it an ideal substrate material for power modules, semiconductor packaging, automotive electronics, optical communication devices, and other high-performance electronic applications.
Custom sizes, thicknesses, surface finishes, and metallization-ready substrates are available upon request.
Key Features
- High-purity aluminum nitride ceramic
- Thermal conductivity: 200 / 220 / 230 W/m·K
- Excellent electrical insulation
- High thermal conductivity
- Low thermal expansion coefficient
- Precision ground surface
- Suitable for DPC, AMB and DBC metallization
- Custom specifications available
Applications
- Power modules
- IGBT and SiC devices
- Semiconductor packaging
- Automotive electronics
- Optical communication modules
- RF electronics
- LED thermal management
Shipping & Customs
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Frequently Asked Questions
This substrate is available with thermal conductivity grades of 200 W/m·K, 220 W/m·K, and 230 W/m·K to meet different thermal management requirements.
Aluminum nitride offers significantly higher thermal conductivity while maintaining excellent electrical insulation and a coefficient of thermal expansion close to silicon, making it ideal for high-power electronic applications.
Yes. The precision-ground surface is suitable for common metallization processes such as DPC and AMB. Other surface preparation requirements can also be discussed for specific applications.
It is widely used in power semiconductor modules, IGBT and SiC devices, automotive electronics, RF components, optical communication modules, LED thermal management, and semiconductor packaging.
Yes. Aluminum nitride ceramics offer excellent thermal stability, high mechanical strength, and reliable performance under demanding operating conditions.
Yes. Custom dimensions, thicknesses, surface finishes, and machining services are available to meet specific design requirements.
The substrate is precision ground to provide a flat surface suitable for electronic packaging. Polishing and other surface finish options are available upon request.
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